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Nov. 2016. Rev. 2.0

1/6

SW069R06VT

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-251

DFN5*6

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

60*

A

Continuous drain current (@T

38*

A

I

DM

Drain current pulsed

(note 1)

240

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

324

mJ

E

AR

Repetitive avalanche energy

(note 1)

18

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

208

1.6

W

1.7

0.01

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251

DFN5*6

R

thjc

Thermal resistance, Junction to case

0.6

R

thja

Thermal resistance, Junction to ambient

77

77

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW I 069R06VT

SW069R06VT

TO-251

TUBE

2

SW HA 069R06VT

SW069R06VT

DFN5*6

REEL

N-channel Enhanced mode TO-251/DFN5*6 MOSFET

Features

 High ruggedness

 Low R

(Typ 6.0m

Ω)@V

 Low Gate Charge (Typ 83nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:Electronic Ballast, Motor Control

Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics,

including fast switching time, low on resistance, low gate charge and especially

excellent avalanche characteristics.

BV

I

D

: 60A

R

6.0m

Ω@V

1

2

3

TO-251

1

2

3

DFN5*6