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SW069R06VT 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW069R06VT
功能描述  N-channel Enhanced mode TO-251/DFN5*6 MOSFET
PDF  6 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW069R06VT 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0
2/6
SW069R06VT
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
60
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
0.04
V/oC
I
DSS
Drain to source leakage current
V
DS=60V, VGS=0V
1
uA
V
DS=48V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=20V, VDS=0V
100
nA
Gate to source leakage current, reverse
V
GS=-20V, VDS=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
1.4
2.4
V
R
DS(ON)
Drain to source on state resistance
V
GS=4.5V, ID=30A
7.0
8.7
m
Ω
V
GS=10V, ID=30A
6.0
7.5
m
Ω
V
GS=10V, ID=60A
6.1
7.6
m
Ω
G
fs
Forward transconductance
V
DS=5V, ID=30A
95
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
3890
pF
C
oss
Output capacitance
484
C
rss
Reverse transfer capacitance
382
t
d(on)
Turn on delay time
V
DS=30V, ID=30A, RG=25Ω,
V
GS=10V
(note 4,5)
21
ns
t
r
Rising time
89
t
d(off)
Turn off delay time
226
t
f
Fall time
174
Q
g
Total gate charge
V
DS=48V, VGS=10V, ID=30A
(note 4,5)
83
nC
Q
gs
Gate-source charge
11
Q
gd
Gate-drain charge
29
R
g
Gate resistance
V
DS=0V, Scan F mode
1.4
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
60
A
I
SM
Pulsed source current
240
A
V
SD
Diode forward voltage drop.
I
S=60A, VGS=0V
1.4
V
t
rr
Reverse recovery time
I
S=30A, VGS=0V,
dI
F/dt=100A/us
26
ns
Q
rr
Reverse recovery charge
14
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =0.7mH, I
AS =30A, VDD=50V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 30A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.



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