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Jun. 2016. Rev. 3.0

1/7

SW2N70D

Absolute maximum ratings

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-251N

TO-252

TO-126

TO-220F

R

thjc

Thermal resistance, Junction to case

1.6

1.5

1.3

6.9

R

thja

Thermal resistance, Junction to ambient

83

81

53

1. Gate 2. Drain 3. Source

Item

Sales Type

Marking

Package

Packaging

1

SW N 2N70D

SW2N70D

TO-251N

TUBE

2

SW D 2N70D

SW2N70D

TO-252

REEL

3

SW L 2N70D

SW2N70D

TO-126

TUBE

4

SW F 2N70D

SW2N70D

TO-220F

TUBE

Order Codes

Symbol

Parameter

Value

Unit

TO-251N

TO-252

TO-126

TO-220F

V

DSS

Drain to source voltage

700

V

I

D

Continuous drain current (@T

2*

A

Continuous drain current (@T

1.2*

A

I

DM

Drain current pulsed

(note 1)

8

A

V

GS

Gate to source voltage

± 30

V

E

AS

Single pulsed avalanche energy

(note 2)

50

mJ

E

AR

Repetitive avalanche energy

(note 1)

5

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

78.1

83.3

96.2

18.1

W

0.63

0.67

0.77

0.14

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

TO-251N

1

2

3

*. Drain current is limited by junction temperature.

N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 11nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Charger,LED

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 2A

R

1

2

3

1

2

3

TO-252

TO-126

TO-220F

1

2

3

1

2

3