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SW2N70D 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW2N70D
功能描述  N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET
PDF  7 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW2N70D 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW2N70D Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW2N70D Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW2N70D Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW2N70D Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW2N70D Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW2N70D Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW2N70D Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0
2/7
SW2N70D
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=250uA
700
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=250uA, referenced to 25
oC
V/oC
I
DSS
Drain to source leakage current
V
DS=700V, VGS=0V
1
uA
V
DS=560V, TC=125
oC
50
uA
I
GSS
Gate to source leakage current, forward
V
GS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
V
GS=-30V, VDS=0V
-100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=250uA
2.5
4.5
V
R
DS(ON)
Drain to source on state resistance
V
GS=10V, ID=1A
5
6.2
Ω
Gfs
Forward transconductance
V
DS=30V, ID=1A
1.9
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=25V, f=1MHz
360
pF
C
oss
Output capacitance
42
C
rss
Reverse transfer capacitance
13
t
d(on)
Turn on delay time
V
DS=350V, ID=2A，RG=25Ω
V
GS=10V
(note 4,5)
7
ns
t
r
Rising time
22
t
d(off)
Turn off delay time
26
t
f
Fall time
24
Q
g
Total gate charge
V
DS=560V, VGS=10V, ID=2A
(note 4,5)
11
nC
Q
gs
Gate-source charge
2
Q
gd
Gate-drain charge
5.5
R
g
Gate resistance
V
DS=0V, Scan F mode
3.5
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
2
A
I
SM
Pulsed source current
8
A
V
SD
Diode forward voltage drop.
I
S=2A, VGS=0V
1.4
V
t
rr
Reverse recovery time
I
S=2A, VGS=0V,
dI
F/dt=100A/us
260
ns
Q
rr
Reverse recovery charge
1.3
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 25mH, I
AS = 2A, VDD = 25V, RG=25Ω, Starting TJ = 25
oC
3.
I
SD ≤ 2A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25
oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.



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