SW2N7002 datasheet(1/5 Pages) SEMIPOWER

部件名	SW2N7002

功能描述	N-channel Enhanced mode SOT-23 MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

网页	http://www.samwinsemi.com

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1 / 5 page

Jun. 2016. Rev. 3.0

1/5

SW2N7002

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

60

V

I

D

Continuous drain current (@T

C=25

oC)

0.3*

A

Continuous drain current (@T

C=100

oC)

0.19*

A

I

DM

Drain current pulsed

(note 1)

1.2

A

V

GS

Gate to source voltage

± 20

V

P

D

Total power dissipation (@T

C=25

oC)

0.35

W

T

STG, TJ

Operating junction temperature & storage temperature

-55 ~ + 150

oC

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient(note 2)

350

oC/W

*. Drain current is limited by junction temperature.

1. Gate 2. Source 3. Drain

SOT-23

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW R 2N7002

SW2N7002

SOT-23

REEL

N-channel Enhanced mode SOT-23 MOSFET

Features

 High Switching Speed

 Low R

DS(ON) (Typ 2.3Ω)@VGS=5V

 Low R

DS(ON) (Typ 1.75Ω)@VGS=10V

 Low Gate Charge (Typ 1.7nC)

 Application: Small Servo Motor Control,

Switch

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

DSS : 60V

I

D

: 0.3A

R

DS(ON)：1.75Ω @VGS=10V

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