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SW2N7002 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW2N7002 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd. |
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2 / 5 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jun. 2016. Rev. 3.0 2/5 SW2N7002 Electrical characteristic ( T C = 25 oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BV DSS Drain to source breakdown voltage V GS=0V, ID=250uA 60 V I DSS Drain to source leakage current V DS=60V, VGS=0V 1 uA V DS=48V, TC=125 oC 50 uA I GSS Gate to source leakage current, forward V GS=10V, VDS=0V 500 nA V GS=20V, VDS=0V 10 uA Gate to source leakage current, reverse V GS=-10V, VDS=0V -500 nA V GS=-20V, VDS=0V -10 uA On characteristics (note 3) V GS(TH) Gate threshold voltage V DS=VGS, ID=250uA 1.0 2.5 V R DS(ON) Drain to source on state resistance V GS=5V, ID = 0.4A 2.3 3 Ω V GS=10V, ID = 0.5A 1.75 2 Ω G fs Forward transconductance V DS = 10 V, ID = 0.2 A 0.3 S Dynamic characteristics(note 4) C iss Input capacitance V GS=0V, VDS=25V, f=1MHz 36 pF C oss Output capacitance 18 C rss Reverse transfer capacitance 3 t d(on) Turn on delay time V DS=30V, VGS=10V , ID=0.2A R G=10Ω 13 ns t r Rising time 25 t d(off) Turn off delay time 46 t f Fall time 29 Q g Total gate charge V DS=10V, VGS=4.5V, ID=0.3A 1.7 nC Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction diode in the MOSFET 0.2 A I SM Pulsed source current 0.8 A V SD Diode forward voltage drop. I S=0.2A, VGS=0V 1.4 V ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. Surface Mounted on FR4 Board,t ≤ 2%. 3. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 4. Guaranteed by design,not subject to production. |
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