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Jul. 2015. Rev. 1.0

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SW417J

P-channel Enhanced mode SOT-23 MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DSS

Drain to source voltage

-30

V

I

D

Continuous drain current (@T

-4*

A

Continuous drain current (@T

-2.5*

A

I

DM

Drain current pulsed

(note 1)

-16

A

V

GS

Gate to source voltage

± 20

V

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

1.2

W

0.01

T

Operating junction temperature & storage temperature

-55 ~ + 150

T

L

Maximum lead temperature for soldering

purpose, 1/8 from case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

R

thja

Thermal resistance, Junction to ambient（note）

105.1

*. Drain current is limited by junction temperature.

BV

I

D

: -4A

R

77m

Ω @V

SOT-23

G

D

S

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW R 417J

SW417J

SOT-23

REEL

Features

 High ruggedness

 Low R

Low R

 Low Gate Charge (Typ 10nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: DC-DC Converter,

Motor Control

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including

Fast switching time, low on resistance, low gate charge and especially excellent

Avalanche characteristics.

Note: R

efined as the solder mounting surface of the drain pins. R

board design.

1. Gate 2. Drain 3. Source

1

2

3