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SW417J 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW417J
功能描述  P-channel Enhanced mode SOT-23 MOSFET
PDF  6 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW417J 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2015. Rev. 1.0
2/6
SW417J
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=-250uA
-30
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=-250uA, referenced to 25
oC
0.01
V/oC
I
DSS
Drain to source leakage current
V
DS=-30V, VGS=0V
-1
uA
V
DS=-24V, TC=125
oC
-50
uA
I
GSS
Gate to source leakage current, forward
V
GS=-20V, VDS=0V
-100
nA
Gate to source leakage current, reverse
V
GS=20V, VDS=0V
100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=-250uA
-1
-2
V
R
DS(ON)
Drain to source on state resistance
V
GS=-10V, ID=-4A
54
65
m
Ω
V
GS=-4.5V, ID=-4A
77
90
m
Ω
G
fs
Forward transconductance
V
DS=-5V, ID=-2A
8
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=-15V, f=1MHz
132
pF
C
oss
Output capacitance
61
C
rss
Reverse transfer capacitance
15
t
d(on)
Turn on delay time
V
DS=-15V, ID=-4A, RG=25Ω,
V
GS=-10V
(note 4,5)
7
ns
t
r
Rising time
33
t
d(off)
Turn off delay time
72
t
f
Fall time
68
Q
g
Total gate charge
V
DS=-24V, VGS=-10V, ID=-4A
(note 4,5)
10
nC
Q
gs
Gate-source charge
1
Q
gd
Gate-drain charge
3
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
-4
A
I
SM
Pulsed source current
-16
A
V
SD
Diode forward voltage drop.
I
S=-4A, VGS=0V
-1.4
V
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
3.
Essentially independent of operating temperature.



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