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Dec. 2016. Rev. 2.0

1/6

SW540

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-252

TO-220

V

DSS

Drain to source voltage

100

V

I

D

Continuous drain current (@T

32*

A

Continuous drain current (@T

20*

A

I

DM

Drain current pulsed

(note 1)

128

A

V

GS

Gate to source voltage

± 20

V

E

AS

Single pulsed avalanche energy

(note 2)

117

mJ

E

AR

Repetitive avalanche energy

(note 1)

12

mJ

dv/dt

Peak diode recovery dv/dt

(note 3)

5

V/ns

P

D

Total power dissipation (@T

83

125

W

0.7

1.0

T

Operating junction temperature & storage temperature

-55 ~ + 150

Thermal characteristics

Symbol

Parameter

Value

Unit

TO-252

TO-220

R

thjc

Thermal resistance, Junction to case

1.5

1.0

R

thja

Thermal resistance, Junction to ambient

56.7

*. Drain current is limited by junction temperature.

1. Gate 2. Drain 3. Source

Order Codes

Item

Sales Type

Marking

Package

Packaging

1

SW D 540

SW540

TO-252

REEL

2

SW P 540

SW540

TO-220

TUBE

N-channel Enhanced mode TO-252/TO-220 MOSFET

Features

 High ruggedness

 Low R

 Low Gate Charge (Typ 48nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application: Synchronous Rectification,

Li Battery Protect Board, Inverter.

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

BV

I

D

: 32A

R

1

2

3

TO-252

1

2

3

TO-220

1

2

3