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Dec. 2016. Rev. 2.0

2/6

SW540

Electrical characteristic ( T

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BV

DSS

Drain to source breakdown voltage

V

100

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

I

0.1

I

DSS

Drain to source leakage current

V

1

uA

V

50

uA

I

GSS

Gate to source leakage current, forward

V

100

nA

Gate to source leakage current, reverse

V

-100

nA

On characteristics

V

GS(TH)

Gate threshold voltage

V

2

4

V

R

DS(ON)

Drain to source on state resistance

V

32

40

m

Ω

V

34

42

G

fs

Forward transconductance

V

63

S

Dynamic characteristics

C

iss

Input capacitance

V

2900

pF

C

oss

Output capacitance

144

C

rss

Reverse transfer capacitance

104

t

d(on)

Turn on delay time

V

V

(note 4,5)

31

ns

t

r

Rising time

55

t

d(off)

Turn off delay time

131

t

f

Fall time

48

Q

g

Total gate charge

V

(note 4,5)

48

nC

Q

gs

Gate-source charge

13

Q

gd

Gate-drain charge

12.5

R

g

Gate resistance

V

1.5

Ω

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

S

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

32

A

I

SM

Pulsed source current

128

A

V

SD

Diode forward voltage drop.

I

1.4

V

t

rr

Reverse recovery time

I

dI

54

ns

Q

rr

Reverse recovery charge

111

nC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

L =1.04mH, I

3.

I

4.

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.

5.

Essentially independent of operating temperature.