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SW4459 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW4459
功能描述  P-channel Enhanced mode SOP-8 MOSFET
PDF  6 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4459 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 2.0
2/6
SW4459
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BV
DSS
Drain to source breakdown voltage
V
GS=0V, ID=-250uA
-30
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
I
D=-250uA, referenced to 25
oC
0.01
V/oC
I
DSS
Drain to source leakage current
V
DS=-30V, VGS=0V
-1
uA
V
DS=-24V, TC=125
oC
-50
uA
I
GSS
Gate to source leakage current, forward
V
GS=-20V, VDS=0V
-100
nA
Gate to source leakage current, reverse
V
GS=20V, VDS=0V
100
nA
On characteristics
V
GS(TH)
Gate threshold voltage
V
DS=VGS, ID=-250uA
-1
-3
V
R
DS(ON)
Drain to source on state resistance
V
GS=-10V, ID=-6.5A
37
49
m
Ω
V
GS=-4.5V, ID=-5A
54
80
m
Ω
G
fs
Forward transconductance
V
DS=-5V, ID=-6.5A
13
S
Dynamic characteristics
C
iss
Input capacitance
V
GS=0V, VDS=-15V, f=1MHz
593
pF
C
oss
Output capacitance
92
C
rss
Reverse transfer capacitance
79
t
d(on)
Turn on delay time
V
DS=-15V, ID=-6A, RG=3Ω,
V
GS=-10V
(note 4,5)
6
ns
t
r
Rising time
41
t
d(off)
Turn off delay time
31
t
f
Fall time
12
Q
g(10V)
Total gate charge(10V)
V
DS=-15V, VGS=-10V, ID=-6.5A
(note 4,5)
12.5
nC
Q
g(4.5V)
Total gate charge(4.5V)
6.3
Q
gs
Gate-source charge
1.7
Q
gd
Gate-drain charge
3
R
g
Gate resistance
V
DS=0V, Scan F mode
10
Ω
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
S
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
-3.5
A
I
SM
Pulsed source current
-14
A
V
SD
Diode forward voltage drop.
I
S=-1A, VGS=0V
-1.0
V
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
3.
Essentially independent of operating temperature.



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