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TSX921 数据表(PDF) 10 Page - STMicroelectronics |
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TSX921 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 32 page ![]() Electrical characteristics TSX920, TSX921, TSX922, TSX923 10/32 DocID024310 Rev 4 Symbol Parameter Conditions Min. Typ. Max. Unit Iout Isink Vout = 16 V 45 50 mA Tmin < Top < Tmax 40 Isource Vout = 0 V 65 74 Tmin < Top < Tmax 60 ICC Supply current (per amplifier) No load, Vout = VCC/2 2.8 3.4 Tmin < Top < Tmax 3.4 GBP Gain bandwidth product RL = 10 kΩ, CL = 20 pF, G = 20 dB 10 MHz FU Unity gain frequency RL = 10 kΩ, CL = 20 pF 12 ɸm Phase margin 55 Degrees Gm Gain margin 5.9 dB SR+ Positive slew rate Av = 1, Vout = 0.5 to 15.5 V, measured between 10 % to 90 % 16.2 V/μs SR- Negative slew rate Av = 1, Vout = 15.5 to 0.5 V, measured between 90 % to 10 % 17.2 en Equivalent input noise voltage f = 10 kHz 16.5 nV√Hz f = 100 kHz 11.8 ∫en Low-frequency peak-to- peak input noise Bandwidth: f = 0.1 to 10 Hz 8.58 µVpp THD+N Total harmonic distortion + noise f = 1 kHz, Av = 1, RL = 10 kΩ, Vout = 4 Vrms 0.0003 % tS Setting time Gain = 1, 100 mV input voltage, 0.1 % of final value 245 ns Gain = 1, 100 mV input voltage, 1 % of final value 178 Shutdown characteristics (TSX920 and TSX923 only) ICC_shdn Supply current in shutdown mode (per amplifier) SHDN = VCC- 7 15 µΑ Tmin < Top < Tmax 20 ton Amplifier turn-on time 1.5 µs toff Amplifier turn-off time 0.2 Notes: (1) Typical value is based on the Vio drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration (see Section 5.5: "Long term input offset voltage drift"). (2) When used in comparator mode, with high differential input voltage, during a long period of time with VCC close to 16 V and Vicm>VCC/2, Vio can experience a permanent drift of a few mV drift. This phenomenon is notably worse at low temperatures. |
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