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TSX921 数据表(PDF) 18 Page - STMicroelectronics

部件名 TSX921
功能描述  10 MHz rail-to-rail CMOS 16 V operational amplifiers
PDF  32 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TSX921 数据表(HTML) 18 Page - STMicroelectronics

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Application information
TSX920, TSX921, TSX922, TSX923
18/32
DocID024310 Rev 4
5.4
Input offset voltage drift over temperature
The maximum input voltage drift over the temperature variation is defined as the offset
variation related to offset value measured at 25 °C. The operational amplifier is one of the
main circuits of the signal conditioning chain, and the amplifier input offset is a major
contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated
during production at application level. The maximum input voltage drift over temperature
enables the system designer to anticipate the effect of temperature variations.
The maximum input voltage drift over temperature is computed using Equation 1.
Equation 1
with T = -40 °C and 125 °C.
The datasheet maximum value is guaranteed by a measurement on a representative
sample size ensuring a Cpk (process capability index) greater than 2.
5.5
Long term input offset voltage drift
To evaluate product reliability, two types of stress acceleration are used:
Voltage acceleration, by changing the applied voltage
Temperature acceleration, by changing the die temperature (below the maximum
junction temperature allowed by the technology) with the ambient temperature.
The voltage acceleration has been defined based on JEDEC results, and is defined using
Equation 2.
Equation 2
Where:
AFV is the voltage acceleration factor
β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1)
VS is the stress voltage used for the accelerated test
VU is the voltage used for the application
The temperature acceleration is driven by the Arrhenius model, and is defined in
Equation 3.
Equation 3
Where:
AFT is the temperature acceleration factor
Ea is the activation energy of the technology based on the failure rate
∆V
io
∆T
ma x
V
io T
V
io 25
T
25 °C
=
°C
A
FV
e
β V
S
V
U
.
=
A
FT
e
E
a
k
------
1
T
U
1
T
S
=
.



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