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TSX921 数据表(PDF) 18 Page - STMicroelectronics |
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TSX921 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 32 page ![]() Application information TSX920, TSX921, TSX922, TSX923 18/32 DocID024310 Rev 4 5.4 Input offset voltage drift over temperature The maximum input voltage drift over the temperature variation is defined as the offset variation related to offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift over temperature is computed using Equation 1. Equation 1 with T = -40 °C and 125 °C. The datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a Cpk (process capability index) greater than 2. 5.5 Long term input offset voltage drift To evaluate product reliability, two types of stress acceleration are used: Voltage acceleration, by changing the applied voltage Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. Equation 2 Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate ∆V io ∆T ma x V io T V io 25 – T 25 °C – = °C A FV e β V S V U – . = A FT e E a k ------ 1 T U 1 T S – = . |
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