FMM23P20 datasheet(2/4 Pages) FCI

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FMM23P20 2.3A 20V P-Channel Enhancement-Mode MOSFET

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = -10uA

-20

Drain-Source On-State Resistance

RDS(on)

VGS = -4.5V, ID = -2.8A

100

Drain-Source On-State Resistance

RDS(on)

VGS = -2.5V, ID = -2.0A

150

Gate Threshold Voltage

VGS(th)

VDS =VGS, ID = -250uA

-0.45

-0.95

Zero Gate Voltage Drain Current

IDSS

VDS = -9.6V, VGS = 0V

-1

Gate Body Leakage

IGSS

VGS = ±8V, VDS = 0V

±100

Gate Resistance

Forward Transconductance

gfs

VDS = -5V, ID = -4.0A

6.5

Dynamic

Total Gate Charge

15.23

Gate-Source Charge

Qgs

5.49

Gate-Drain Charge

Qgd

2.74

Turn-On Delay Time

td(on)

17.28

Turn-On Rise Time

3.73

Turn-Off Delay Time

td(off)

36.05

Turn-Off Fall Time

6.19

Input Capacitance

Ciss

882.51

Output Capacitance

Coss

145.54

Reverse Transfer Capacitance

Crss

97.26

Source-Drain Diode

Max. Diode Forward Current

-2.4

Diode Forward Voltage

VSD

IS = -1.6A, VGS = 0V

-0.8

-1.2

Note: Pulse test: pulse width <= 300us, duty cycle<= 2%

Feb '06 Rev 2

P-Channel Enhancement-Mode MOSFET

VDS = -6V, VGS = 0V

f = 1.0 MHz

VDD = -6V, RL = 6Ω

D = −1Α, VGEN = -4.5V

RG = 6Ω

VDS = -6V, ID = -2.8A

VGS = -4.5V

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