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FMM23P20 数据表(PDF) 1 Page - First Components International |
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FMM23P20 数据表(HTML) 1 Page - First Components International |
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1 / 4 page ![]() FMM23P20 2.3A 20V P-Channel Enhancement-Mode MOSFET 20V P-Channel Enhancement-Mode MOSFET V DS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Maximum Ratings and Thermal Characteristics (T A = 25 oC unless otherwise noted) Symbol Limit Unit VDS -20 VGS ± 8 ID -2.3 IDM -10 TA = 25 oC 0.9 TA = 75 oC 0.57 TJ, Tstg -55 to 150 oC EAS mJ RθJC Junction-to-Ambient Thermal Resistance (PCB mounted) RθJA 145 Note: 1. Maximum DC current limited by the package 2. 1-in 2oz Cu PCB board Feb '06 Rev 2 1 oC/W Junction-to-Case Thermal Resistance Parameter V A W Drain-Source Voltage PD Pulsed Drain Current Avalanche Energy with Single Pulse ID=50A, VDD=25V, L=0.5mH Operating Junction and Storage Temperature Range Continuous Drain Current Gate-Source Voltage Maximum Power Dissipation N-Channel MOSFET Top View Internal Schematic Diagram TO-236 (SOT-23) Gate Drain Source 1) 2) 2 |
类似零件编号 - FMM23P20 |
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类似说明 - FMM23P20 |
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