BU508D datasheet(1/8 Pages) MICRO-ELECTRONICS

部件名	BU508D

功能描述	HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

PDF	8 Pages

Scroll/Zoom	100%

制造商	MICRO-ELECTRONICS [Micro Electronics]

网页	http://www.microelectr.com.hk

标志

1 / 8 page

BU208D/508D/508DFI

HIGH VOLTAGE FASTSWITCHING NPN

POWER TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPES

s

HIGH VOLTAGE CAPABILITY

s

U.L. RECOGNISED ISOWATT218 PACKAGE

(U.L. FILE # E81734 (N)

s

JEDEC TO-3 METAL CASE

s

NPN TRANSISTOR WITH INTEGRATED

FREEWHEELING DIODE

APPLICATIONS:

s

HORIZONTAL DEFLECTION FOR COLOUR

TV

DESCRIPTION

The BU208D, BU508D and BU508DFI are

manufactured

using

Multiepitaxial

Mesa

technology for cost-effective high performance

and uses a Hollow Emitter structure to enhance

switching speeds.

INTERNAL SCHEMATIC DIAGRAM

June 1996

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Unit

VCES

Collector-Emit ter Voltage (VBE = 0)

1500

V

VCEO

Collector-Emit ter Voltage (IB = 0)

700

V

VEBO

Emitter-Base Voltage (IC =0)

10

V

IC

Collector Current

8

A

ICM

Collector Peak Current (tp <5 ms)

15

A

TO - 3

TO - 218

ISOW ATT218

Ptot

T otal Dissipat ion at Tc =25

oC

150

125

50

W

Tstg

Storage Temperat ure

-65 to 150 -65 to 150

-65 t o 150

oC

Tj

Max. O perat ing Junction Temperature

150

oC

1

2

3

TO-218

ISOWATT218

1

2

3

1

2

TO-3

1/8

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