BU508D datasheet(2/8 Pages) MICRO-ELECTRONICS

部件名	BU508D

功能描述	HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR

PDF	8 Pages

Scroll/Zoom	100%

制造商	MICRO-ELECTRONICS [Micro Electronics]

网页	http://www.microelectr.com.hk

标志

2 / 8 page

THERMAL DATA

TO-3

T O-218

ISOW AT T218

Rthj-ca se

Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

ICES

Collector Cut -off

Current (VBE =0)

VCE = 1500 V

Tj = 125

IEBO

Emitter Cut- off Current

(IC =0)

VEB = 5 V

300

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC =4.5 A

IB =2 A

VCEO(s us)

Collector-Emitt er

Sustaining Voltage

IC =100 mA

700

VBE(sat)

∗ Base-Emitter

Sat uration Voltage

IC =4.5 A

IB = 2 A

1.3

INDUCT IVE LOAD

Storage Time

Fall Time

IC =4.5 A

hFE =2.5

VCC =140 V

LC =0.9 mH

LB =3

µH7

550

µs

Diode F orward Volt age

IF =4 A

Transition Frequency

IC =0.1 A

VCE = 5 V

f = 5 MHz

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area (TO-3)

Safe Operating Area (TO-218/ISOWATT218)

BU208D/508D/508DFI

2/8

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