NAND01GW3A2AV6F datasheet(1/57 Pages) STMICROELECTRONICS

部件名	NAND01GW3A2AV6F

功能描述	128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

PDF	57 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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February 2005

NAND128-A, NAND256-A

NAND512-A, NAND01G-A

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)

528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

FEATURES SUMMARY

■

HIGH DENSITY NAND FLASH MEMORIES

–

Up to 1 Gbit memory array

–

Up to 32 Mbit spare area

–

Cost effective solutions for mass storage

applications

■

NAND INTERFACE

–

x8 or x16 bus width

–

Multiplexed Address/ Data

–

Pinout compatibility for all densities

■

SUPPLY VOLTAGE

–

1.8V device: VDD = 1.7 to 1.95V

–

3.0V device: VDD = 2.7 to 3.6V

■

PAGE SIZE

–

x8 device: (512 + 16 spare) Bytes

–

x16 device: (256 + 8 spare) Words

■

BLOCK SIZE

–

x8 device: (16K + 512 spare) Bytes

–

x16 device: (8K + 256 spare) Words

■

PAGE READ / PROGRAM

–

Random access: 12µs (max)

–

Sequential access: 50ns (min)

–

Page program time: 200µs (typ)

■

COPY BACK PROGRAM MODE

–

Fast page copy without external buffering

■

FAST BLOCK ERASE

–

Block erase time: 2ms (Typ)

■

STATUS REGISTER

■

ELECTRONIC SIGNATURE

■

CHIP ENABLE ‘DON’T CARE’ OPTION

–

Simple interface with microcontroller

■

SERIAL NUMBER OPTION

■

HARDWARE DATA PROTECTION

–

Program/Erase locked during Power

transitions

Figure 1. Packages

■

DATA INTEGRITY

–

100,000 Program/Erase cycles

–

10 years Data Retention

■

RoHS COMPLIANCE

–

Lead-Free Components are Compliant

with the RoHS Directive

■

DEVELOPMENT TOOLS

–

Error Correction Code software and

hardware models

–

Bad Blocks Management and Wear

Leveling algorithms

–

File System OS Native reference software

–

Hardware simulation models

TSOP48 12 x 20mm

VFBGA55 8 x 10 x 1mm

TFBGA55 8 x 10 x 1.2mm

VFBGA63 9 x 11 x 1mm

TFBGA63 9 x 11 x 1.2mm

FBGA

USOP48 12 x 17 x 0.65mm

类似零件编号 - NAND01GW3A2AV6F

制造商	部件名	数据表	功能描述
Numonyx B.V	NAND01GW3A2B-KGD	1Mb / 48P	Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
Numonyx B.V	NAND01GW3A2BE06	1Mb / 48P	Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory

More results

类似说明 - NAND01GW3A2AV6F

制造商	部件名	数据表	功能描述
STMicroelectronics	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 13-Feb-2006
	NAND01G-N	217Kb / 23P	1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package 31-Jan-2006
	NAND04GW3B2B	501Kb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories 30-May-2006
	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 23-Nov-2006
	NAND256-M	228Kb / 23P	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 24-Aug-2006
	NAND512R3A2C	674Kb / 51P	512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 08-Feb-2007
Numonyx B.V	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND512R3A2C	1Mb / 51P	512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
	NAND512R3A2SN6F	1Mb / 55P	512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
STMicroelectronics	NAND512-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 25-Feb-2005