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S2N7002SW 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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S2N7002SW 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page ![]() Elektronische Bauelemente S2 7002SW 0.38A, 60V, RDS(O ) 2.8 Ω Ω Ω Ω -Channel Enhancement Mode Power MOSFET 26-Jul-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION S2N7002SW provides designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. SOT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Halogen free products available ESD protected Low RDS(on) APPLICATIONS Low side load switch Level shift circuits DC-DC converter Portable applications MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-323 3K 7 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Steady state, TA=25°C 0.32 Steady state, TA=85°C 0.23 t<5s, TA=25°C 0.38 Continuous Drain Current t<5s, TA=85°C ID 0.27 A Pulsed Drain Current@ tp=10µs IDM 1.5 A Source Current (Body diode) IS 0.3 A Steady state 300 Total Device Power Dissipation 1 t<5s PD 420 mW Steady state 417 Thermal Resistance from Junction to Ambient 1 t<5s RθJA 300 °C / W Gate-Source ESD Rating (HBM, method 3015) ESD 2 kV Lead Temperature for Soldering Purposes@ 1/8’’ from case for 10s TL 260 °C Operating Junction and Storage Temperature TJ, TSTG -55~150 °C SOT-323 701 Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 3.00 G 0.1 REF. B 1.80 2.55 H 0.525 REF. C 1.1 1.4 J 0.05 0.25 D 0.80 1.15 K 0.8 TYP. E 1.20 2.00 L 0.65 TYP. F 0.15 0.50 |
类似零件编号 - S2N7002SW |
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类似说明 - S2N7002SW |
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