Elektronische Bauelemente

S2 7002SW

Ω

Ω

Ω

-Channel Enhancement Mode Power MOSFET

26-Jul-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

60

-

-

V

Drain-Source Breakdown Voltage

Temperature Coefficient

-

71

-

mV / °C

Gate-Source Leakage Current

-

-

±10

µA

-

-

1

-

-

500

Drain-Source Leakage Current

-

-

0.1

µA

On Characteristics

2

Gate-Threshold Voltage

1

-

2

V

Negative Threshold Voltage

Temperature Coefficient

-

4

-

mV / °C

Forward Transconductance

0.08

-

-

S

-

-

2.8

Static Drain-Source

On-Resistance

3

-

-

3.2

Dynamic Characteristics

Input Capacitance

-

21

-

Output Capacitance

-

12

-

Reverse Transfer Capacitance

-

0.35

-

pF

f=1MHz

Total Gate Charge

-

0.44

-

Gate-Source Charge

-

0.2

-

Gate-Drain Charge

-

0.1

-

nC

Switching Characteristics

Turn-on Delay Time

-

2.7

-

Rise Time

-

2.5

-

Turn-off Delay Time

-

13

-

Fall Time

-

8

-

nS

Drain-Source Diode Characteristics

Diode Forward Voltage

-

0.85

-

V

Notes:

1.

FR-4 board is 1 × 0.75 × 0.062 inch.

2.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.