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ASL59D4 数据表(PDF) 3 Page - Advanced Semiconductor Business Inc. |
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ASL59D4 数据表(HTML) 3 Page - Advanced Semiconductor Business Inc. |
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3 / 15 page ![]() 3/15 ASB Inc. sales@asb.co.kr June 2017 ASL59D4 2.3 Pin Configuration Pin Description Simplified Outline 3 RF_IN 1 10 RF_IN 2 15 RF_OUT 2 22 RF_OUT 1 Others NC or GND Note: Backside metal paddle is RF and DC ground. 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +9 V Maximum Current 500 mA Operation Junction Temperature +150 C Input RF Power (CW, 75 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 9 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 175 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level Level 3 at 260 C reflow |
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