AT75C310

5

Figure 4. DRAM Write Cycle (Single Write)

Table 3. DRAM Write Cycle (Single Write) Timings

Symbol

Parameter

Min (ns)

Max (ns)

t

RC

Read or Write Cycle Time

125.0

–

RAS Pulse Width

82.0

–

t

RP

RAS Precharge Time

42.0

–

t

CSH

CAS Hold Time

61.0

–

CAS to RAS Precharge Time

49.0

–

t

RCD

RAS to CAS Delay Time

41.0

–

t

RSH

RAS Hold Time

29.0

–

CAS Pulse Width

20.0

–

t

ASR

Row Address Setup Time

1.5

–

t

RAH

Row Address Hold Time

22.0

–

Column Address Setup Time

15.0

–

t

CAH

Column Address Hold Time

21.0

–

t

WCS

Write Command Setup Time

18.0

–

Write Command Hold Time

21.0

–

t

DS

Data Setup Time

8.0

–

t

DH

Data Hold Time

21.0

–

D

NDWE

A

NCASx

NRASx