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ECT25S16 数据表(PDF) 19 Page - E-CMOS Corporation |
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ECT25S16 数据表(HTML) 19 Page - E-CMOS Corporation |
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19 / 45 page ![]() E-CMOS Corp. (www.ecmos.com.tw) Page 19 of 45 5B05N-Rev.F001 ECT25S16 16M BIT SPI NOR FLASH Fast Read (0BH) See Figure 11, the Read Data Bytes at Higher Speed (Fast Read) instruction is for quickly Reading data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO, each bit being shifted out, at a Max frequency fc, during the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 11. Fast Read Sequence Diagram Dual Output Fast Read (3BH) See Figure 12, the Dual Output Fast Read instruction is followed by 3-byte address (A23-A0) and a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data Is shifted out. Figure 12. Dual Output Fast Read Sequence Diagram |
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