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ECT25S16 数据表(PDF) 20 Page - E-CMOS Corporation |
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ECT25S16 数据表(HTML) 20 Page - E-CMOS Corporation |
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20 / 45 page ![]() E-CMOS Corp. (www.ecmos.com.tw) Page 20 of 45 5B05N-Rev.F001 ECT25S16 16M BIT SPI NOR FLASH Quad Output Fast Read (6BH) See Figure 13, the Quad Output Fast Read instruction is followed by 3-byte address (A23-A0) and a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure 13. Quad Output Fast Read Sequence Diagram Dual I/O Fast Read (BBH) See Figure 14, the Dual I/O Fast Read instruction is similar to the Dual Output Fast Read instruction but with the capability to input the 3-byte address (A23- 0) and a “Continuous Read Mode”byte 2-bit per clock by SI and SO, each bit being latched in during the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. |
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