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IXGH28N30 数据表(PDF) 2 Page - IXYS Corporation

部件名 IXGH28N30
功能描述  HiPerFAST IGBT
PDF  2 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXGH28N30 数据表(HTML) 2 Page - IXYS Corporation

  IXGH28N30 Datasheet HTML 1Page - IXYS Corporation IXGH28N30 Datasheet HTML 2Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C = IC90; VCE = 10 V,
12
18
S
Pulse test, t
£ 300 ms, duty cycle £ 2 %
C
ies
1500
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
130
pF
C
res
40
pF
Q
g
90
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
15
nC
Q
gc
35
nC
t
d(on)
15
ns
t
ri
30
ns
t
d(off)
130
ns
t
fi
180
ns
E
off
0.8
mJ
t
d(on)
15
ns
t
ri
30
ns
E
on
0.3
mJ
t
d(off)
250
500
ns
t
fi
250
600
ns
E
off
1.5
3.0
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Inductive load, T
J = 125°C
I
C = IC90, VGE = 15 V, L = 100 mH
V
CE = 0.8 VCES, RG = Roff = 4.7 W
Inductive load, T
J = 25°C
I
C = IC90, VGE = 15 V, L = 100 mH,
V
CE = 0.8 VCES, RG = Roff = 4.7 W
IXGH 28N30
IXGT 28N30
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e
5.45 BSC
.215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3
0.25 BSC
.010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (D3 PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025



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