2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

V

IN

−0.3 to 6.5V

V

−0.3 to 6.5V

V

OUT

−0.3V to(V

0.3V)

≤ 6.5

Storage Temperature

−65˚C to +150˚C

ESD (Note 4)

Human Body Model

2KV

Machine Model

200V

Maximum Power Dissipation (Note 3)

θ

255˚C/W

V

IN

V

V

0 to 6.0V

Junction Temperature

−40˚C to +125˚C

Maximum Power Dissipation (Note 3)

392mW at 25˚C

Electrical Characteristics

Unless otherwise specified: V

values and limits appearing in standard typeface are for T

junction temperature range for operation, −40˚C to +125˚C. (Note 10) (Note 11)

Symbol

Parameter

Conditions

Typ

Limit

Units

Min

Max

∆V

OUT

Output Voltage

Tolerance

I

-2

2

%of

V

OUT(nom)

I

−3

3

Line Regulation Error

V

6.0V,

I

−0.1

0.1

%/V

Load Regulation Error

I

0.0004

0.002

%/mA

Dropout Voltage

(Note 6)

I

0.4

2

mV

I

60

100

∆V

OUT(SLEEP)

Output Voltage

difference at MODE =

0V

MODE = 0V, (Note 7)

-150

+100

mV

Transient

Response

Line Transient

Response (Note 5)

MODE = 1.8V, I

100mA, T

10µS,

V

wave, (Note 8)

21

mVpp

Load Transient

Response (Note 5)

MODE = 1.8V, C

T

V

9, 12)

100

mVpk

PSRR

Power Supply Rejection

Ratio (Note 5)

V

I

50

dB

V

I

10

I

Q(ON)

Quiescent Current

MODE = 1.8V, I

V

IN

= 4.2V

85

120

µA

MODE = 1.8V, I

V

160

200

I

Q(OFF)

Quiescent Current

ENABLE = 0V, V

1

3

µA

I

Q(SLEEP)

Current in Standby

Mode

MODE = 0V, I

= 4.2V

14

21

µA

I

SC

Short Circuit Current

Limit (Note 5)

Output Grounded

600

mA

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