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LP3987 数据表(PDF) 5 Page - National Semiconductor (TI) |
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LP3987 数据表(HTML) 5 Page - National Semiconductor (TI) |
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5 / 17 page ![]() Electrical Characteristics (Continued) Unless otherwise specified: V EN = 1.8V, MODE = 1.8V, VIN =VOUT(nom) + 0.5V, CIN = 1 µF, IOUT = 1mA, COUT = 1 µF. Typical values and limits appearing in standard typeface are for T J = 25˚C. Limits appearing in boldface type apply over the entire junction temperature range for operation, −40˚C to +125˚C. (Note 10) (Note 11) Symbol Parameter Conditions Typ Limit Units Min Max I SC(SLEEP) Short Circuit Current in Sleep MODE Output Grounded 28 43 mA I OUT(ON) Maximum Output Current at MODE = 1.8V MODE = 1.8V 150 mA I OUT(SLEEP) Maximum Output Current at MODE = 0V MODE = 0V 3 mA e n Output Noise Voltage, (Note 5) BW = 10 Hz to 100 kHz, C OUT = 1µF 70 µVrms T SHUTDOWN Shutdown Temperature (Note 5) Sleep MODE = 1.8V 155 ˚C Logic Control Characteristics I EN Maximum Input Current at EN V EN = 0 and VIN= 6.0V 0.015 µA V IL Logic Low Input Threshold V IN = 3.05 to 6V 0.5 V V IH Logic High Input Threshold V IN = 3.05 to 6V 1.2 V V MODE_L Logic Low Input Threshold V IN = 3.05 to 6V 0.5 V V MODE_H Logic High Input Threshold V IN = 3.05 to 6V 1.2 V I MODE Maximum Input Current at V MODE V MODE = 0 and VIN = 6.0V 0.015 µA Timing Characteristics T ON Turn on Time (On Mode), (Notes 5, 13) MODE = 1.8V, C OUT = 4.7µF 170 250 µs T SLEEP Turn on Time (Sleep Mode), (Note 5), (Note 14) MODE = 0V, C OUT = 4.7µF 0.5 5 ms T MODE Sleep to On Mode Settle Time, (Note 5), (Note 15) C OUT = 4.7µF, Enable = 1.8V 200 300 µs Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: All voltages are with respect to the potential at the GND pin. Note 3: The Absolute Maximum power dissipation depends on the ambient temperature and can be calculated using the formula: P D =(TJ -TA)/ θ JA, Where TJ is the junction temperature, TA is the ambient temperature, and θJA is the junction-to-ambient thermal resistance. For instant, if VIN in target application is 4.2V and worse case current consumption is 90mA. Therefore PMAX_DISSIPATION = (4.2-2.7)*0.09 =135mW. With PMAX_DISSIPATION is 135mW, TJmax is 125˚C and worse case ambient temperature (TA ) in target application is 85˚C, θJA = (125-85)/0.135 = 296˚C/W. Note 4: The human body model is 100pF discharged through 1.5k Ω. Note 5: This electrical specification is guaranteed by design. www.national.com 5 |
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