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UBA2033 数据表(PDF) 8 Page - NXP Semiconductors

部件名 UBA2033
功能描述  HF full bridge driver IC
PDF  20 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

UBA2033 数据表(HTML) 8 Page - NXP Semiconductors

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2002 Oct 08
8
Philips Semiconductors
Product specification
HF full bridge driver IC
UBA2033
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611D”.
CHARACTERISTICS
Tj =25 °C; all voltages are measured with respect to SGND; positive currents flow into the IC; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
High voltage
IHV
high voltage supply current
t < 0.5 s and VHV = 550 V
0
−
30
µA
IFSL, IFSR
high voltage floating supply
current
t < 0.5 s and VFSL =VFSR = 564 V
0
−
30
µA
Start-up; powered via pin HV
Ii(HV)
HV input current
VHV = 11 V; note 1
−
0.5
1.0
mA
VHV(rel)
level of release power drive
voltage
11
12.5
14
V
VHV(UVLO)
reset level of power drive voltage
8.5
10
11.5
V
VHV(hys)
HV hysteresis voltage
2.0
2.5
3.0
V
VDD
internal supply voltage
VHV = 20 V
10.5
11.5
13.5
V
Start-up; powered via pin VDD
Ii(DD)
VDD input current
VDD = 8.25 V; note 2
−
0.5
1.0
mA
VDD(rel)
level of release power drive
voltage
8.25
9.0
9.75
V
VDD(UVLO)
reset level of power drive voltage
5.75
6.5
7.25
V
VDD(hys)
hysteresis voltage
2.0
2.5
3.0
V
Output stage
Ron(H)
higher MOSFETs on resistance
VFSR =VFSL = 12 V (with respect
to SHR and SHL); Isource =50mA
15
21
26
Ω
Roff(H)
higher MOSFETs off resistance
VFSR =VFSL = 12 V (with respect
to SHR and SHL); Isink =50mA
914
18
Ω
Ron(L)
lower MOSFETs on resistance
VDD =12V; Isource =50mA
15
21
26
Ω
Roff(L)
lower MOSFETs off resistance
VDD =12V; Isink = 50 mA
9
14
18
Ω
Io(source)
output source current
VDD =VFSL =VFSR =12V;
VGHR =VGHL =VGLR =VGLL =0V
130
180
−
mA
Io(sink)
output sink current
VDD =VFSL =VFSR =12V;
VGHR =VGHL =VGLR =VGLL =12V
150
200
−
mA
Vdiode
bootstrap diode voltage drop
Idiode = 20 mA
1.7
2.1
2.5
V
tno
non-overlap time
−−
250
ns
VFSL
HS lockout voltage left
3.0
4.0
5.0
V



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