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MCP6021 数据表(PDF) 3 Page - Microchip Technology |
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MCP6021 数据表(HTML) 3 Page - Microchip Technology |
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3 / 28 page  2003 Microchip Technology Inc. DS21685B-page 3 MCP6021/2/3/4 AC CHARACTERISTICS MCP6023 CHIP SELECT (CS) CHARACTERISTICS Output Maximum Output Voltage Swing VOL, VOH VSS+15 — VDD-20 mV 0.5V output overdrive Output Short Circuit Current ISC —±30 — mA Power Supply Supply Voltage VS 2.5 — 5.5 V Quiescent Current per Amplifier IQ 0.5 1.0 1.35 mA IO = 0 Electrical Specifications: Unless otherwise indicated, TA = 25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL =10 kΩ to VDD/2 and CL = 60 pF. Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 10 — MHz Phase Margin at Unity-Gain PM — 65 — ° G = 1 Settling Time, 0.2% tSETTLE — 250 — ns G = 1, VOUT = 100 mVp-p Slew Rate SR — 7.0 — V/µs Total Harmonic Distortion Plus Noise f = 1 kHz, G = 1 THD+N — 0.00053 — % VOUT = 0.25V + 3.25V, BW = 22 kHz f = 1 kHz, G = 1, RL = 600Ω@1 KHz THD+N — 0.00064 — % VOUT = 0.25V + 3.25V, BW = 22 kHz f = 1 kHz, G = +1 V/V THD+N — 0.0014 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz f = 1 kHz, G = +10 V/V THD+N — 0.0009 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz f = 1 kHz, G = +100 V/V THD+N — 0.005 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz Noise Input Voltage Noise Eni — 2.9 — µVp-p f = 0.1 Hz to 10 Hz Input Voltage Noise Density eni —8.7 — nV/ √Hz f = 10 kHz Input Current Noise Density ini —3 — fA/ √Hz f = 1 kHz Electrical Specifications: Unless otherwise indicated, TA = 25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL =10 kΩ to VDD/2 and CL = 60 pF. Parameters Sym Min Typ Max Units Conditions DC Characteristics CS Logic Threshold, Low VIL 0 — 0.2VDD V CS Input Current, Low ICSL -1.0 0.01 — µA CS = VSS CS Logic Threshold, High VIH 0.8VDD —VDD V CS Input Current, High ICSH — 0.01 2.0 µA CS = VDD CS Input High, GND Current ISS — 0.05 2.0 µA CS = VDD Amplifier Output Leakage —— 0.01 — µA CS = VDD Timing CS Low to Amplifier Output Turn-on Time tON — 2 10 µs G = 1, VIN = VSS, CS = 0.2VDD to VOUT = 0.45VDD time CS High to Amplifier Output High-Z Turn-off Time tOFF — 0.01 — µs G = 1, VIN = VSS, CS = 0.8VDD to VOUT = 0.05VDD time Hysteresis VHYST — 0.6 — V Internal Switch DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2 and RL =10kΩ to VDD/2. Parameters Sym Min Typ Max Units Conditions |
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