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JCS80N10F 数据表(PDF) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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JCS80N10F 数据表(HTML) 5 Page - JILIN SINO-MICROELECTRONICS CO., LTD. |
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5 / 11 page ![]() R JCS80N10F 版本:201510C 5/11 特征曲线 ELECTRICAL CHARACTERISTICS (curves) 0 2 4 6 8 10 0 40 80 120 160 200 VGS=8V VGS=7V VGS=6V VGS=5V V GS Top 12V 10V 8V 7V 6V Bottom 5V Notes: 1. 250μs pulse test 2. T C=25 ℃ V DS [V] 4 6 8 0.1 1 10 100 1000 Notes: 1.20μs pulse test 2.V DS=15V 25℃ V GS [V] 175℃ 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 C rss C oss C iss C iss = Cgs+Cgd (Cds=shorted) C oss = Cds+Cgd C rss = Cgd V DS Drain-Source Voltage [V] 0 2 4 6 8 10 12 0 30 60 90 120 V DS=80V I D=40A Q g Toltal Gate Charge [nC] Transfer Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics On-Region Characteristics 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V GS=0V 25℃ 175℃ V S D [V] 5 10 15 20 25 0 4 8 12 16 20 40A Notes: 250μs pulse test V GS [V] |
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