DMHT6016LFJ datasheet(2/7 Pages) DIODES

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DMHT6016LFJ

Document number: DS37895 Rev. 2 - 2

2 of 7

www.diodes.com

November 2016

DMHT6016LFJ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

10.6

8.5

t<10s

TA = +25°C

TA = +70°C

14.8

11.9

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

Avalanche Current (Note 7) L=0.1mH

IAS

15.3

Avalanche Energy (Note 7) L=0.1mH

EAS

11.7

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.16

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

108

°C/W

t<10s

Total Power Dissipation (Note 6)

2.7

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

4.4

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

—

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

Ω

VGS = 10V, ID = 10A

—

22.2

VGS = 4.5V, ID = 6A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

864

—

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

COSS

—

282

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

1.3

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

8.4

—



VDS = 30V, ID = 10A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

QGS

—

3.1

—

Gate-Drain Charge

QGD

—

4.3

—

Turn-On Delay Time

tD(ON)

—

3.4

—

VGS = 10V, VDS = 30V,

RG = 6Ω, ID = 10A

Turn-On Rise Time

—

5.2

—

Turn-Off Delay Time

tD(OFF)

—

Turn-Off Fall Time

—

Reverse Recovery Time

tRR

—

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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