DMHT6016LFJ

Document number: DS37895 Rev. 2 - 2

4 of 7

www.diodes.com

November 2016

© Diodes Incorporated

DMHT6016LFJ

0.01

0.015

0.02

0.025

0.03

0.035

0.04

-50

-25

0

25

50

75

100

125

150

V

= 4.5V

GS

I = 6A

D

V

= 10V

GS

I = 10A

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250µA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

0

1

10

100

1000

10000

0

10

20

30

40

50

60

f=1MHz

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

0

2

4

6

8

10

0

2

4

6

8

10

12

14

16

18

V

= 30V

DS

I = 10A

D

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate Charge

0.001

0.01

0.1

1

10

100

0.1

1

10

100

Limited

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

J (m ax )

T = 25°C

C

V

= 10V

GS

Single Pulse

DUT on 1 * MRP Board

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

Figure 8 Gate Threshold Variation vs. Temperature