| 制造商 | 部件名 | 数据表 | 功能描述 |
 Samsung semiconductor |
IRFS640
|
308Kb/5P
|
Improved inductive ruggedness
|
 Fairchild Semiconductor |
IRFS640
|
916Kb/10P
|
200V N-Channel MOSFET
|
 Inchange Semiconductor ... |
IRFS640
|
318Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Foshan Blue Rocket Elec... |
IRFS640
|
814Kb/6P
|
N-CHANNEL MOSFET in a TO-220F Plastic Package
|
 SHENZHEN DOINGTER SEMIC... |
IRFS640
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
 List of Unclassifed Man... |
IRFS640
|
2Mb/31P
|
SEMICONDUCTORS
|
 Samsung semiconductor |
IRFS640A
|
304Kb/6P
|
Improved gate charge
|
 Fairchild Semiconductor |
IRFS640A
|
325Kb/7P
|
Rugged Gate Oxide Technology
|
 Inchange Semiconductor ... |
IRFS640A
|
59Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Fairchild Semiconductor |
IRFS640B
|
916Kb/10P
|
200V N-Channel MOSFET
|
 Tiger Electronic Co.,Lt... |
IRFS640B
|
23Kb/1P
|
200V N-Channel MOSFET
|
 Kersemi Electronic Co.,... |
IRFS640B
|
1Mb/9P
|
200V N-Channel MOSFET
|