| 制造商 | 部件名 | 数据表 | 功能描述 |
Samsung semiconductor |
IRFS640
|
308Kb/5P |
Improved inductive ruggedness
|
Fairchild Semiconductor |
IRFS640
|
916Kb/10P |
200V N-Channel MOSFET
|
Inchange Semiconductor ... |
IRFS640
|
318Kb/2P |
isc N-Channel MOSFET Transistor
|
Foshan Blue Rocket Elec... |
IRFS640
|
814Kb/6P |
N-CHANNEL MOSFET in a TO-220F Plastic Package
|
SHENZHEN DOINGTER SEMIC... |
IRFS640
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
List of Unclassifed Man... |
IRFS640
|
2Mb/31P |
SEMICONDUCTORS
|
Samsung semiconductor |
IRFS640A
|
304Kb/6P |
Improved gate charge
|
Fairchild Semiconductor |
IRFS640A
|
325Kb/7P |
Rugged Gate Oxide Technology
|
Inchange Semiconductor ... |
IRFS640A
|
59Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
IRFS640B
|
916Kb/10P |
200V N-Channel MOSFET
|
Tiger Electronic Co.,Lt... |
IRFS640B
|
23Kb/1P |
200V N-Channel MOSFET
|
Kersemi Electronic Co.,... |
IRFS640B
|
1Mb/9P |
200V N-Channel MOSFET
|
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