PXAC243502FV-V1-R0 数据表, PDF

	PXAC243502FV-V1-R0	PXAC243502FV
如同	No Data	PXAC243502FV(2)
开始	No Data	PXAC243502FV(4) PXAC243502FVV(4)
结尾	No Data	No Data
包括	No Data	No Data

制造商

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
Cree, Inc	PXAC243502FV	543Kb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC243502FVV1R0	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R0XTMA1	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250XTMA1	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
Search Partnumber : Start with "PXAC243502FV" - Total : 59 ( 1/3 Page)
Infineon Technologies A...	PXAC243502FVV1R0	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R0XTMA1	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250XTMA1	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
Cree, Inc	PXAC241002FC	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FC-V1-R0	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FC-V1-R2	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FCV1R0	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FCV1R2	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241702FC	577Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz

PXAC243502FV-V1-R0 数据表, PDF [销售商]

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PXAC243502FV-V1-R0 销售商

销售商	部件名	制造商	功能描述	Price	Qty. BuyNow

PXAC243502FV-V1-R0 数据表, PDF

PXAC243502FV-V1-R0 数据表, PDF [销售商]

PXAC243502FV-V1-R0 销售商

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