| 制造商 | 部件名 | 数据表 | 功能描述 |
 Stanson Technology |
STP601
|
398Kb/7P
|
P Channel Enhancement Mode MOSFET
|
|
STP601D
|
676Kb/7P
|
P Channel Enhancement Mode MOSFET
|
 VBsemi Electronics Co.,... |
STP601D
|
971Kb/7P
|
P-Channel 60 V (D-S) MOSFET
|
 Stanson Technology |
STP607D
|
1Mb/8P
|
P Channel Enhancement Mode MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
STP60L60
|
1Mb/3P
|
N-Channel MOSFET uses advanced trench technology
|
 SamHop Microelectronics... |
STP60L60F
|
124Kb/7P
|
Super high dense cell design for low RDS(ON).
|
 STMicroelectronics |
STP60N043DM9
|
227Kb/12P
|
N-channel 600 V, 38 mΩ typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
06-Sep-2022
|
|
STP60N05-14
|
77Kb/5P
|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Mar-1996
|
 Inchange Semiconductor ... |
STP60N05-14
|
371Kb/2P
|
isc N-Channel MOSFET Transistor
|
 STMicroelectronics |
STP60N06
|
347Kb/10P
|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
May-1993
|
|
STP60N06-14
|
77Kb/5P
|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Mar-1996
|
 Inchange Semiconductor ... |
STP60N06-14
|
318Kb/2P
|
Isc N-Channel MOSFET Transistor
|
 STMicroelectronics |
STP60N06FI
|
347Kb/10P
|
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
May-1993
|
|
STP60N3LH5
|
391Kb/16P
|
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET
20-Apr-2009
|
 VBsemi Electronics Co.,... |
STP60N3LH5
|
1Mb/10P
|
N-Channel 30 V (D-S) MOSFET
|
 Inchange Semiconductor ... |
STP60N3LH5
|
372Kb/2P
|
isc N-Channel MOSFET Transistor
|
 STMicroelectronics |
STP60N55F3
|
630Kb/20P
|
N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™III Power MOSFET
17-Apr-2009
|
 Inchange Semiconductor ... |
STP60N55F3
|
372Kb/2P
|
isc N-Channel MOSFET Transistor
|
 STMicroelectronics |
STP60NE03L-10
|
99Kb/8P
|
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
Dec-1997
|
 Inchange Semiconductor ... |
STP60NE03L-10
|
371Kb/2P
|
isc N-Channel MOSFET Transistor
|