| 制造商 | 部件名 | 数据表 | 功能描述 |
 New Jersey Semi-Conduct... |
VB30
|
102Kb/1P
|
These rectifiers offer high voltage ranges in minimum-sized
|
 Extech Instruments Corp... |
VB300
|
140Kb/1P
|
3-Axis G-Force Datalogger
|
 Vishay Siliconix |
VB30100C
|
167Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08
|
|
VB30100C
|
165Kb/6P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30100C
|
102Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
20-Jun-2018
|
 Inchange Semiconductor ... |
VB30100C
|
399Kb/3P
|
Schottky Barrier Rectifier
|
 Vishay Siliconix |
VB30100C-E3
|
152Kb/5P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier
11-Sep-13
|
|
VB30100C-E3
|
178Kb/6P
|
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
13-Dec-16
|
|
VB30100C-E3
|
214Kb/6P
|
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A
15-Oct-2019
|
 Inchange Semiconductor ... |
VB30100C-E3
|
315Kb/2P
|
Schotty Barrier Diode
|
 Vishay Siliconix |
VB30100C-E3/4W
|
167Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08
|
|
VB30100C-E3/4W
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30100C-E3/8W
|
167Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
19-May-08
|
|
VB30100C-E3/8W
|
163Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09
|
|
VB30100C-M3
|
90Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
03-Jan-17
|
|
VB30100C-M3
|
78Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
15-May-13
|
|
VB30100CHM3
|
90Kb/5P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
03-Jan-17
|
|
VB30100C
|
102Kb/4P
|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
20-Jun-2018
|
|
VB30100S
|
168Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
31-Jul-08
|
|
VB30100S
|
149Kb/5P
|
High-Voltage Trench MOS Barrier Schottky Rectifier
23-Oct-09
|