PXAC241002FC-V1-R0 数据表, PDF

制造商	部件名	数据表	功能描述
Cree, Inc	PXAC241002FC-V1-R2	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FCV1R0	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FCV1R2	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
	PXAC241002FC	279Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC241702FC	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
Cree, Inc	PXAC241702FC	577Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC241702FCV1R0	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R0XTMA1	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R250	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R250XTMA1	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
Cree, Inc	PXAC243502FV	543Kb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
	PXAC243502FVV1R0	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R0XTMA1	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250XTMA1	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2015-04-13
	PXAC243502FV	1Mb/10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC200902FC	489Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11
Cree, Inc	PXAC200902FC	600Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz

PXAC241002FC-V1-R0 数据表, PDF

PXAC241002FC-V1-R0 Datasheet ,PDF

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