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SCTWA90N65G2V 数据表 (PDF) - STMicroelectronics
SCTWA90N65G2V Datasheet PDF - STMicroelectronics
部件名 SCTWA90N65G2V
下载  SCTWA90N65G2V 下载
文件大小   249.03 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an HiP247 long leads package

SCTWA90N65G2V Datasheet (PDF)

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SCTWA90N65G2V Datasheet PDF - STMicroelectronics

部件名 SCTWA90N65G2V
下载  SCTWA90N65G2V Click to download

文件大小   249.03 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an HiP247 long leads package

SCTWA90N65G2V 数据表 (HTML) - STMicroelectronics


SCTWA90N65G2V 产品详情

Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA90N65G2V Product summary

Applications
■ Power supply for renewable energy systems
■ High frequency DC-DC converters
■ Charging stations




类似零件编号 - SCTWA90N65G2V

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTWA90N65G2V-4 STMICROELECTRONICS-SCTWA90N65G2V-4 Datasheet
239Kb / 13P		 Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package
25-Nov-2020
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类似说明 - SCTWA90N65G2V

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTWA90N65G2V-4 STMICROELECTRONICS-SCTWA90N65G2V-4 Datasheet
239Kb / 13P		 Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package
25-Nov-2020
SCTW40N120G2V STMICROELECTRONICS-SCTW40N120G2V Datasheet
205Kb / 12P		 Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
09-Jun-2021
SCTW100N65G2AG STMICROELECTRONICS-SCTW100N65G2AG Datasheet
423Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
DS11643 - Rev 2 - November 2018
SCTW90N65G2V STMICROELECTRONICS-SCTW90N65G2V Datasheet
402Kb / 12P		 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019
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206Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
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SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P		 Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
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SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
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238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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