Features
■ Low on-voltage drop (VCE(sat))
■ Operating junction temperature up to 175 °C
■ Low Cres / Cies ratio (no cross conduction
susceptibility)
■ Tight parameter distribution
■ Ultrafast soft-recovery antiparallel diode
■ Short-circuit rugged

Applications
■ Motor drives
■ High frequency inverters
■ SMPS and PFC in both hard switch and
resonant topologies

Description
This device utilizes the advanced PowerMESH™
process for the IGBT and the Turbo 2 Ultrafast
high voltage technology for the diode. The
combination results in a very good trade-off
between conduction losses and switching
behavior rendering the product ideal for diverse
high voltage applications operating at high
frequencies.