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STGF10HF60KD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGF10HF60KD
功能描述  10 A - 600 V - short-circuit rugged IGBT
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF10HF60KD 数据表(HTML) 3 Page - STMicroelectronics

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STGx10HF60KD
Electrical ratings
Doc ID 16136 Rev 2
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK, TO-220
TO-220FP
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
(1)
Collector current (continuous) at TC = 25 °C
20
9
A
IC
(1)
Collector current (continuous) at TC = 100 °C
10
6
A
ICL
(2)
Turn-off latching current
TBD
A
ICP
(3)
Pulsed collector current
TBD
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at TC = 25 °C
10
A
IFSM
Surge non repetitive forward current tp = 10 ms
sinusoidal
20
A
VISO
Isolations withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; TC = 25 °C)
-
2500
V
PTOT
Total dissipation at TC = 25 °C
80
30
W
tscw
Short-circuit withstand time, VCE = 0.5V(BR)CES,
TC = 125 °C, RG = 10 Ω, VGE = 12 V
5µs
Tj
Operating junction temperature
– 40 to 175
°C
1.
Calculated according to the iterative formula:
2.
Vclamp = 80% of VCES, Tj =175 °C, RG=10 Ω, VGE=15 V
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
I
C TC
()
T
jmax
() TC
R
thj
c
V
CE sat
() max
() Tjmax
() IC TC
()
,
()
×
-------------------------------------------------------------------------------------------------------
=
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-220
TO-220FP
Rthj-case Thermal resistance junction-case IGBT
1.8
5
°C/W
Rthj-case Thermal resistance junction-case diode
4
7
°C/W
Rthj-amb Thermal resistance junction-ambient
62.5
62.5
°C/W
Obsolete
Product(s)
- Obsolete
Product(s)



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