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STGF10HF60KD 数据表(PDF) 1 Page - STMicroelectronics |
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STGF10HF60KD 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() February 2012 Doc ID 16136 Rev 2 1/13 13 STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution ■ Ultrafast soft-recovery antiparallel diode ■ Short-circuit rugged Applications ■ Motor drives ■ High frequency inverters ■ SMPS and PFC in both hard switch and resonant topologies Description This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. Figure 1. Internal schematic diagram 1 2 3 1 2 3 TO-220 TO-220FP 1 3 D²PAK TAB Table 1. Device summary Order codes Marking Package Packaging STGB10HF60KDT4 GB10HF60KD D²PAK Tape and reel STGF10HF60KD GF10HF60KD TO-220FP Tube STGP10HF60KD GP10HF60KD TO-220 Tube www.st.com Obsolete Product(s) - Obsolete Product(s) |
类似零件编号 - STGF10HF60KD |
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类似说明 - STGF10HF60KD |
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