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SCT20N120H 数据表 (PDF) - STMicroelectronics
SCT20N120H Datasheet PDF - STMicroelectronics
部件名 SCT20N120H
下载  SCT20N120H 下载
文件大小   686.12 Kbytes
页   16 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

SCT20N120H Datasheet (PDF)

Go To PDF Page 下载 数据表
SCT20N120H Datasheet PDF - STMicroelectronics

部件名 SCT20N120H
下载  SCT20N120H Click to download

文件大小   686.12 Kbytes
页   16 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

SCT20N120H 数据表 (HTML) - STMicroelectronics


SCT20N120H 产品详情

Features
• Very tight variation of on-resistance vs. temperature
• Very high operating junction temperature capability (TJ = 175 °C)
• Very fast and robust intrinsic body diode
• Low capacitance

Applications
• Solar inverters, UPS
• Motor drives
• High voltage DC-DC converters
• Switch mode power supplies




类似零件编号 - SCT20N120H

制造商部件名数据表功能描述
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Inchange Semiconductor ...		 SCT20N120H ISC-SCT20N120H Datasheet
369Kb / 2P		 SiC N-Channel MOSFET
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类似说明 - SCT20N120H

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCT20N120AG STMICROELECTRONICS-SCT20N120AG Datasheet
487Kb / 13P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
Rev 3 - October 2019
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCT018H65G3AG STMICROELECTRONICS-SCT018H65G3AG Datasheet
390Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package
07-Oct-2022
SCT020H120G3AG STMICROELECTRONICS-SCT020H120G3AG Datasheet
362Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package
27-Sep-2022
SCT025H120G3AG STMICROELECTRONICS-SCT025H120G3AG Datasheet
369Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package
28-Nov-2022
SCT040H120G3AG STMICROELECTRONICS-SCT040H120G3AG Datasheet
386Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
14-Oct-2022
SCT070H120G3AG STMICROELECTRONICS-SCT070H120G3AG Datasheet
396Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package
04-Apr-2023
SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
SCTH60N120G2-7AG STMICROELECTRONICS-SCTH60N120G2-7AG Datasheet
356Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package
02-Aug-2021
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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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