SCT20N120H pdf, SCT20N120H 功能描述, SCT20N120H 数据表, SCT20N120H view ::: ALLDATASHEET :::

部件名	SCT20N120H

功能描述	Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package

文件大小	686.12 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

类似零件编号 - SCT20N120H

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	SCT20N120H	369Kb / 2P	SiC N-Channel MOSFET

制造商	部件名	数据表	功能描述
STMicroelectronics	SCT20N120AG	487Kb / 13P	Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package Rev 3 - October 2019
	SCTW100N120G2AG	217Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package 23-Jul-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCT018H65G3AG	390Kb / 14P	Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package 07-Oct-2022
	SCT020H120G3AG	362Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package 27-Sep-2022
	SCT025H120G3AG	369Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package 28-Nov-2022
	SCT040H120G3AG	386Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package 14-Oct-2022
	SCT070H120G3AG	396Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package 04-Apr-2023
	SCT10N120AG	238Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package 21-Sep-2022
	SCTH60N120G2-7AG	356Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package 02-Aug-2021