VDSS = 55V
RDS(on) = 0.075Ω
ID = 19A

Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Ultra Low On-Resistance
● ESD Protected
● Surface Mount (IRFR2605)
● Straight Lead (IRFU2605)
● 150°C Operating Temperature
● Repetitive Avalanche Rated
● Fast Switching