STP24N60DM2 数据表(PDF) - STMicroelectronics

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STP24N60DM2 数据表 (PDF) - STMicroelectronics

STP24N60DM2 Datasheet PDF - STMicroelectronics


部件名	STP24N60DM2

下载	STP24N60DM2 下载

文件大小	1200.83 Kbytes

页	21 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STP24N60DM2 Datasheet (PDF)

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STP24N60DM2 Datasheet PDF - STMicroelectronics


部件名	STP24N60DM2

下载	STP24N60DM2 Click to download

文件大小	1200.83 Kbytes

页	21 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages

STP24N60DM2 数据表 (HTML) - STMicroelectronics

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STP24N60DM2 产品详情

Description
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features
• Extremely low gate charge and input capacitance
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Extremely high dv/dt and avalanche capabilities

Applications
• Switching applications

类似零件编号 - STP24N60DM2

制造商	部件名	数据表	功能描述
STMicroelectronics	STP24N60M2	1Mb / 22P	N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus??low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages 28-May-2013
	STP24N60M2	1Mb / 22P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK 28-May-2013
	STP24N60M6	268Kb / 13P	N-channel 600 V, 162 m typ., 17 A, MDmesh™ M6 Power MOSFET in a TO-220 package 01-Aug-2018

类似说明 - STP24N60DM2

制造商	部件名	数据表	功能描述
STMicroelectronics	STF26NM60N	1Mb / 23P	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages 20-Jun-2012
	STW34NM60ND	1Mb / 22P	N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 01-Oct-2012
	STP24N60M2	1Mb / 22P	N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus??low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages 28-May-2013
	STB24N60M2	1Mb / 22P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK 28-May-2013
	STF40N60M2	1Mb / 22P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages 13-May-2014
	STFI40N60M2	1Mb / 21P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages 13-May-2014
	STW33N60M2	1Mb / 20P	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages November 2013 Rev 2
	STF9N60M2	884Kb / 15P	N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages 10-Mar-2014
	STB28NM60ND	1Mb / 22P	N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages 05-May-2014
	STP13N60M2	1Mb / 18P	N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages February 2014 Rev 5

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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