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STP24N60DM2 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP24N60DM2
功能描述  N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP24N60DM2 数据表(HTML) 3 Page - STMicroelectronics

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DocID025499 Rev 3
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STB24N60DM2, STP24N60DM2, STW24N60DM2
Electrical ratings
21
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
18
A
I
D
Drain current (continuous) at T
C
= 100 °C
11
A
I
DM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
72
A
P
TOT
Total dissipation at T
C
= 25 °C
150
W
dv/dt
(2)
2.
I
SD
≤ 18 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
=400 V.
Peak diode recovery voltage slope
40
V/ns
dv/dt
(3)
3.
V
DS ≤
480 V
MOSFET dv/dt ruggedness
50
V/ns
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK
TO-220
TO-247
R
thj-case
Thermal resistance junction-case max
0.83
°C/W
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board
30
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T
jmax
)
3.5
A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50)
180
mJ



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