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STP24N60DM2 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP24N60DM2
功能描述  N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP24N60DM2 数据表(HTML) 5 Page - STMicroelectronics

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STB24N60DM2, STP24N60DM2, STW24N60DM2
Electrical characteristics
21
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
(1)
1.
Limited by maximum junction temperature
Source-drain current
-
18
A
I
SDM
(2)
2.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
72
A
V
SD
(3)
3.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 18 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 18)
-
155
ns
Q
rr
Reverse recovery charge
-
956
nC
I
RRM
Reverse recovery current
-
12.5
A
t
rr
Reverse recovery time
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 18)
-
200
ns
Q
rr
Reverse recovery charge
-
1450
nC
I
RRM
Reverse recovery current
-
13
A



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