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LT6553IGN 数据表(PDF) 3 Page - Linear Technology |
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LT6553IGN 数据表(HTML) 3 Page - Linear Technology |
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3 / 8 page ![]() LT6553 3 6553i FPBW Full Power Bandwidth 2V –3dB, VOUT = 2VP-P (Note 7) 270 400 MHz FPBW Full Power Bandwidth 4V –3dB, VOUT = 4VP-P 200 MHz All Hostile Crosstalk f = 10MHz, VOUT = 2VP-P –75 dB f = 100MHz, VOUT = 2VP-P –50 dB tS Settling Time 0.1% of VFINAL, VSTEP = 2V 6 ns tF, tR Small-Signal Rise and Fall Time 10% to 90%, VOUT = 200mVP-P 550 ps dG Differential Gain (Note 8) 0.01 % dP Differential Phase (Note 8) 0.01 Deg HD2 2nd Harmonic Distortion f = 10MHz, VOUT = 2VP-P –77 dB HD3 3rd Harmonic Distortion f = 10MHz, VOUT = 2VP-P –73 dB ELECTRICAL CHARACTERISTICS The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = ±5V, RL = 150Ω, CL = 1.5pF, VEN = 0.4V, VAGND, VDGND = 0V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: This parameter is guaranteed to meet specified performance through design and characterization. It is not production tested. Note 3: As long as output current and junction temperature are kept below the Absolute Maximum Ratings, no damage to the part will occur. Depending on the supply voltage, a heat sink may be required. Note 4: The LT6553C is guaranteed functional over the operating temperature range of –40 °C to 85°C. Note 5: The LT6553C is guaranteed to meet specified performance from 0 °C to 70°C. The LT6553C is designed, characterized and expected to meet specified performance from –40 °C and 85°C but is not tested or QA sampled at these temperatures. The LT6553I is guaranteed to meet specified performance from –40 °C to 85°C. TYPICAL PERFOR A CE CHARACTERISTICS Supply Current per Amplifier vs Temperature Supply Current per Amplifier vs Supply Voltage Supply Current per Amplifier vs EN Pin Voltage TEMPERATURE ( °C) –55 –15 25 45 125 6553 G01 –35 5 65 85 105 12 10 8 6 4 2 0 TOTAL SUPPLY VOLTAGE (V) 04 6553 G02 1 2 3 56 7 8 9 10 11 12 12 10 8 6 4 2 0 EN VOLTAGE (V) 6553 G03 12 10 8 6 4 2 0 0 1.0 2.0 2.5 0.5 1.5 3.0 3.5 4.0 VS = ±5V RL = ∞ VIN = 0V VS = ±5V VDGND = 0V VIN = 0V VEN = 0V VEN = 0.4V V– = –V+ VEN, VDGND, VIN = 0V TA = 25°C TA = –55°C TA = 25°C TA = 125°C Note 6: The two supply voltage settings for power supply rejection are shifted from the typical ±VS data points for ease of testing. The first measurement is taken at V+ = 3V, V– = –1.5V to provide the required 3V headroom for the enable circuitry to function with EN, DGND, AGND and all inputs connected to 0V. The second measurement is taken at V+ = 8V, V– = –4V. Note 7: Full power bandwidth is calculated from the slew rate: FPBW = SR/( π • VP-P) Note 8: Differential gain and phase are measured using a Tektronix TSG120YC/NTSC signal generator and a Tektronix 1780R video measurement set. The resolution of this equipment is better than 0.1% and 0.1 °. Nine identical amplifier stages were cascaded giving an effective resolution of better than 0.011% and 0.011 °. |
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