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LTC3403 数据表(PDF) 3 Page - Linear Technology |
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LTC3403 数据表(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() 3 LTC3403 3403f TYPICAL PERFOR A CE CHARACTERISTICS Efficiency vs VIN Efficiency vs Output Current Efficiency vs Output Current Efficiency vs Output Current Oscillator Frequency vs Temperature (From Figure 1a) OUTPUT CURRENT (mA) 30 90 100 20 10 80 50 70 60 40 0.1 10 100 1000 3403 G02 0 1 VIN = 3.6V VIN = 3.6V VIN = 4.2V VIN = 4.2V TA = 25°C FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 1.2V OUTPUT CURRENT (mA) 30 90 100 20 10 80 50 70 60 40 0.1 10 100 1000 3403 G03 0 1 VIN = 3.6V VIN = 3.6V VIN = 4.2V VIN = 4.2V TA = 25°C FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 1.5V TEMPERATURE ( °C) –50 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1.30 25 75 –25 0 50 100 125 VIN = 3.6V 3403 G05 VIN (V) 2.5 55 50 65 70 75 100 85 3.0 3.5 3403 G01 60 90 95 80 4.0 4.5 IL = 300mA IL = 600mA IL = 100mA IL = 10mA OUTPUT CURRENT (mA) 30 90 100 20 10 80 50 70 60 40 0.1 10 100 1000 3403 G04 0 1 VIN = 3.6V VIN = 3.6V VIN = 4.2V VIN = 4.2V TA = 25°C FORCED CONTINUOUS MODE Burst Mode OPERATION VOUT = 2.5V Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: The LTC3403E is guaranteed to meet performance specifications from 0 °C to 70°C. Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: LTC3403: TJ = TA + (PD)(43°C/W) Note 4: When VREF > 1.2V and VREF x3 > VIN, the P-channel FET will be on in parallel with the bypass PFET reducing the overall RDS(ON). Note 5: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125 °C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. ELECTRICAL CHARACTERISTICS VOUT (V) 0 100 90 80 70 60 50 40 12 3 4 3403 GO1a TA = 25°C VIN = 3.6V 100mA BURST MODE 0PERATION 600mA FORCED CONTINUOUS MODE 100mA FORCED CONTINUOUS MODE Efficiency vs VOUT |
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